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Renesas Shows Fast, Low Cost Transistor For 45nm Process

Renesas Technology presented the results of work on the creation of a high-speed and low-cost transistor for microprocessors and single-chip systems, which will be manufactured at 45 nm or less.

At the heart of the novelty is a hybrid structure CMIS (Complementary Metal Insulator Semiconductor). Its peculiarity lies in the fact that the gate of the p-type transistor is made of metal, and the gate of the n-type transistor is made of polycrystalline silicon. To overcome the difficulties arising from this approach, the company’s specialists decided to use a material with a high dielectric constant (HfSiON) in the gate, which can be obtained by simply adding fluorine ions and minimal processing of a layer consisting of titanium nitride, which is formed at the previous stage of the technological process. An important advantage of the new technology is that it does not require significant changes in the existing technical process, and this, in turn, has a positive effect on the cost of chips.

The company demonstrated the practical result of the development at the 2021 IEEE International Electron Devices Meeting, held the other day in San Francisco. A prototype transistor with a 40nm gate, released using the new technology, allegedly demonstrated excellent performance and load capacity.

Source: Renesas Technology

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