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Ax88x72a.Linksys USB300M USB Ethernet Adapter

 

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Oct 26,  · PC Pitstop – PC Performance Roots. PC Pitstop began in with an emphasis on computer diagnostics and maintenance. During the early days of the dot com boom, our online PC maintenance tools were skyrocketing. Nov 11,  · AXC USB to Fast Ethernet Adapter device driver for Windows This package provides ASIX AXC USB to Fast Ethernet Adapter Device Driver and is supported on Dell Venus 11 running the following Operating Systems: Windows The package provides the installation files for ASIX AXA USB to Fast Ethernet Adapter Driver version If the driver is already installed on your system, updating (overwrite-installing) may fix various issues, add new functions, or just upgrade to the available version.

 

Ax88x72a.ASIX AX USB to Fast Ethernet Adapter – Free download and software reviews – CNET Download

Nov 11,  · AXC USB to Fast Ethernet Adapter device driver for Windows This package provides ASIX AXC USB to Fast Ethernet Adapter Device Driver and is supported on Dell Venus 11 running the following Operating Systems: Windows Oct 26,  · PC Pitstop – PC Performance Roots. PC Pitstop began in with an emphasis on computer diagnostics and maintenance. During the early days of the dot com boom, our online PC maintenance tools were skyrocketing. The Plugable USB2-E Fast Ethernet adapter is a great way to add fast 10/Mbps Ethernet to your computer via USB This adapter is compact, portable, durable, and features wide compatibility using an ASIX AX chipset.
 
 
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BE-SONOS: Macronix technology for easy 45nm flash production

As we already reported, Macronix, together with IBM and Qimonda, recently introduced a new type of memory to the public, positioned as a replacement for flash memory – PRAM. However, the company has not forgotten about the traditional flash memory and is going to master the production of 45-nm chips, which use the SONOS technology (silicon-oxide-nitride-oxide-silicon, structure of the “silicon-oxide-nitride-oxide-silicon” type).

Called BE-SONOS, a new flash memory architecture is designed to address the bottleneck that prevents manufacturers from meeting increasingly delicate manufacturing standards with traditional floating-gate technology. However, Macronix plans to produce the first 2 Gbit flash memory samples made using BE-SONOS technology next year at 75 nm standards. The commercial implementation of the technology, it is assumed in the company, will begin along with the massive introduction of 45-nm production, that is, by 2021.

The advantage of the SONOS structure is its compatibility with general-purpose logic processes, which allows such memory to be used as embedded in systems-on-a-chip (SoC). However, there is also a drawback – a large leakage current. In most cases, the first oxide layer is too thin to prevent tunneling. In the past, researchers have tried to solve this problem by adding an extra layer of nitride less than 4 nm thick, which achieved better storage times, but increased programming time.

BE (Bandgap Engineered) -SONOS uses a more complex structure: SONONOS. The additional two layers of oxide and nitride achieve a total insulator thickness of 5.3 nm, on top of which there is a 7 nm layer of charge retaining nitride and a 9 nm blocking oxide layer. As a result, a sufficiently thick insulator layer provides a long storage time for the recorded information. When programming, the width of the forbidden zone changes, which is the opposite of what was observed when the blocking layer of nitride was introduced in previous experiments, and the electrons quickly tunnel into the cell.

BE-SONOS can be used for both NAND and NOR flash memory (differing, in fact, only in the organization of read and write buses), but, most likely, it will be most in demand in NAND products. Write speed – up to 6 MB / s, but it is worth noting that the erasure speed is 3-4 ms per block, which is noticeably higher than the typical value of 2 ms. The stated number of rewriting cycles is at least 10 thousand.

It is also worth noting here that a recognized industry leader, Samsung, recently announced the creation of a similar technology called CTF (charge-trap flash). Only the Samsung structure looks like TANOS and contains, in addition to nitride and silicon oxide, metallic tantalum and aluminum oxide. Macronix believes their technology is easier to manufacture than CTF.

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